Course Description
This full-day on-site course provides a comprehensive examination of ion implantation processes and equipment used in the manufacture of advanced silicon ICs. Mystique will be replaced by comprehension as participants learn both the fundamental science and the technology of ion implantation. Topics discussed include:
- ion implant process applications
- silicon crystallography as it relates to ion implantation
- doping basics and fundamentals
- ion stopping mechanisms – nuclear stopping, electronic stopping
- dopant profiles – e.g., projected range, straggle, lateral straggle, distributions
- ion channelling – causes, effects, solutions
- crystal damage and thermal annealing
- ion implanter subsystems, including ion generation, mass analysis, acceleration, scanning, and dosimetry
- major types of ion implanters – medium current, high current, low energy, high energy
- process challenges – e.g., contamination control, ion beam purity, wafer charging, ultra-shallow junction formation
- process characterization and control – both in-line monitoring and off-line monitoring and characterization methodologies
- new ion implantation and doping techniques – e.g., plasma doping, GILD, cryo implantation
Who Should Attend
This course is designed for semiconductor industry professionals who wish to enhance or update their knowledge of ion implantation. These include:
- process engineers and technologists
- equipment engineers and technologists
- process integration engineers
- yield engineers
- production supervisors
- technical managers
- equipment/materials sales/marketing experts
Course Notes
A comprehensive, detailed course manual is provided.
Course Fee and Additional Information
To schedule this course at your site or for additional information, including course fees, please contact the course instructor.